Passivation of the beryllium acceptor in GaN and a possible route for <i>p</i>-type doping

Using theory and experiment, we address a possible p-type doping route of GaN using the Be acceptor. Hybrid functional calculations suggest that straightforward incorporation in will likely lead to compensated high resistivity samples. In this case, beryllium interstitials nitrogen vacancies are most compensating donors. However, also show simultaneous hydrogen nitrogen-rich growth regime is formation neutral BeGa-Hi complexes. These complexes energetically favorable do not exhibit any transition levels bandgap. Subsequent annealing hydrogen-free or ambient dissociate these activate shallow BeGa acceptors GaN. Experimental measurements, where an ultraviolet photoluminescence band related acceptor emerges after Be-doped GaN, confirm findings.